2006 Volume 19 Issue 4 Pages 455-458
Fabrication processes of Au nanometer wiring circuit was proposed, which is plated on doped Si wafer through resist windows or nano-insulation beds. The resist windows are fabricated with using negative resist by an electron-beam lithography process. After the Au plating, Au wired circuits is realized by oxidizing the resist and the Si substrate. The nano-insulation beds are fabricated by the special processes on the semi-conductive Si wafer, which have flat surface with conductive and insulating area. The Au plating is performed on the conductive area and the plated Au wire is insulated from base substrate by oxidizing Si surface area. Au plating is performed on the negatively biased Si wafer at 9V with using NaAuCl4 dissolved in ethanol at 0.5 mol%. The Au plated area on the Si wafer through resist window showed doted line. However continuous Au wire with 500 nm wide was successfully plated on the Si wafer, which was under coated with 1 nm thick semi-conductive carbon-sulfur-gold (C-S-Au) film.
