Abstract
Direct, resist-free positive photolithographic deposition of various metal oxides was achieved using photochemical metalorganic deposition. The metalorganic precursors, manganese(II) 2-ethylhexanoate, nickel(II) 2-ethylhexanoate and molybdenum(II) 2-ethylhexanoate and mixtures of barium(II) 2-ethylhexanoate and titanium(IV) di-n-butoxide bis(2-ethylhexanoate), were all spin cast as amorphous thin films from solutions. Upon exposure to ultraviolet light, the organic components of the precursor are ejected from the film and the remaining metal is ultimately converted to amorphous metal oxide or mixed metal oxide. The photochemistry of the decomposition reaction of all precursors was monitored by Fourier transform infrared spectroscopy. Upon exposure to UV light irradiation, negative photolithography was observed. However, after a short period of exposure to UV light, positive pattern of the precursor can be developed. When this process is followed by a blanket exposure, the net result is the positive lithographic deposition of the metal oxide. By using these precursors and contact photolithography, the deposition of micron sized features of amorphous manganese, nickel and molybdenum oxide, and Ba1.13T0.17O was achieved, in both the negative and positive lithography methods.
