CA Resist with Side Chain PAG Group for EUV Resist

Takao Watanabe; Yasuyuki Fukushima; Hideaki Shiotani; Masamichi Hayakawa; Satoshi Ogi; Yusuke Enodo; Tomotaka Yamamoto; Shinichi Yusa; Hiroo Kinoshita

doi:10.2494/photopolymer.19.521

Takao Watanabe, Yasuyuki Fukushima, Hideaki Shiotani, Masamichi Hayakawa, Satoshi Ogi, Yusuke Enodo, Tomotaka Yamamoto, Shinichi Yusa, Hiroo Kinoshita

Author information

Takao Watanabe
Laboratory of Advanced Science and Technology for Industry, University of Hyogo
Yasuyuki Fukushima
Laboratory of Advanced Science and Technology for Industry, University of Hyogo
Hideaki Shiotani
Laboratory of Advanced Science and Technology for Industry, University of Hyogo
Masamichi Hayakawa
Toyo Gosei Kogyo Co., Ltd.
Satoshi Ogi
Toyo Gosei Kogyo Co., Ltd.
Yusuke Enodo
Toyo Gosei Kogyo Co., Ltd.
Tomotaka Yamamoto
Toyo Gosei Kogyo Co., Ltd.
Shinichi Yusa
Graduate School of Engineering, University of Hyogo
Hiroo Kinoshita
Laboratory of Advanced Science and Technology for Industry, University of Hyogo

Keywords: EUVL, chemical amplification resist, outgassing, PAG, LER

JOURNAL FREE ACCESS

2006 Volume 19 Issue 4 Pages 521-524

DOI https://doi.org/10.2494/photopolymer.19.521

Details

Abstract

A novel resist system was designed and synthesized to reduce line edge roughness (LER) and increase sensitivity for a resist in extreme ultraviolet lithography (EUV) and electron beam (EB) lithography. A sulfonium salts group was supplied at side chain of base polymer system. The base polymer consists of copolymer of polyhydroxy styrene, solution inhibitor and monomer containing PAG as a backbone. Under EB exposure, a LER of 2.0 nm (3?) is achieved using PAG bounded polymer. A LER of PAG bounded polymer is smaller than that of PAG blended polymer. Under EUV exposure, E0 sensitivity of 0.9 mJ/cm² and a low outgassing characteristics are achieved.

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