FET Characteristics of Dinaphthothienothiophene (DNTT) on Si/SiO₂ Substrates with Various Surface-Modifications

Abstract

Field-effect transistors (FETs) consisting of vapor-deposited thin-film of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) as an active layer on silanized Si/SiO2 substrates were fabricated and evaluated. Depending on the length of alkyl groups in silanization reagents, FET characteristics of the devices were affected: with octadecyltrichlorosilane (C₁₈-OTS), devices showing superior FET characteristics up to FET mobility of 3.1 cm² V^-1 s^-1 were obtained