Abstract
It is reviewed that research and development of resist for extreme ultraviolet lithographic in University of Hyogo. It is focused on the mitigation of the development of high sensitive and low line edge roughness EUV resist. To achieve high sensitivity, it is found that cyclo(1,3-per-fluoropropanedisulfone) imidate employed as an anion of PAG is beneficial in EUV exposure to achieve high sensitivity. To achieve low LER and high sensitivity simultaneously, PAG bonded resist is proposed. We demonstrate Eo sensitivity of higher than 2 mJ/cm2 under EUV exposure. PAG bonded resist which has LER of around 2.0 nm and 6.8 μC/c2 are demonstrated. Furthermore, design concept of low outgassing resist is introduced.
