A Change in Mechanical and Electrical Properties of Sn-doped Indium Oxide Layer on Plastic Substrate by the Post-annealing

Abstract

The crystallization of ITO layer was progressing gradually in storage at the room temperature. On one hand when ITO layer on PC substrate was still amorphous in a short-term storage (case 1), surface resistance of ITO layer decreased by the post-annealing treatment; on the other hand when ITO layer on that was mostly crystalline in a long-term storage (case 2), surface resistance of ITO layer increased by that treatment. Either of post-annealed ITO layer had the compressive internal stress though case 1 showed higher internal stress than case 2. Regarding case 1, ITO layer was not damaged because of the same level elongation as PC substrate during the post-annealing treatment and surface resistance of it decreased. Regarding case 2, while PC substrate elongated as the same level as case 1, ITO layer elongated less than case 1 during the post-annealing treatment. Microcracks were generated in ITO layer due to the stress. Surface resistance might increase because of microcracks.