Surface Energy Change of Si(100) Wafer by Exposing to Air

Abstract

By contact angle method, surface energy of Si(100) wafer is measured with lapse of time in ambient condition. The polar component γ_s^pof surface energy increases drastically but the dispersion component γ_s^d decreases. Surface energy γ (=γ_s^d+γ_s^p) gradually decreases. The surface energy change is mainly reflected with native oxide growth on the Si substrate. The polar and dispersion component of resist film corresponds mostly to those of surface energy of Si(100) after 10h exposing time to air. The spin coating condition can be designed effectively base on the surface energy model.