抄録
Significant progress has been made in the development of extreme ultraviolet lithography (EUVL). EUV resists continue to improve towards its targets for sensitivity, resolution limit, and line width roughness (LWR). An update to benchmark the latest results of high performance EUV resists is reported. Also, the details of initial work made on resist enhancement processes such as alternative aqueous rinse solutions and resist bake in-vacuum, for the reduction of LWR, are discussed. In addition, the latest results of ongoing manufacturability evaluation of EUVL at Selete are presented.
