The Influence of Deposition Condition on Mechanical and Electrical Properties of Sn-doped Indium Oxide Layer on Plastic Substrate

Abstract

As-deposited absorbance and resistivity depended on as-deposited transmittance (ADT). Absorbance of annealed ITO layer was low not so depending on ADT due to the reduction of indium metal component in the annealing treatment. Resistivity became lower after annealing because the carrier generation by crystallization was dominant in the annealing treatment. Grain size enlarged as ADT rose. Resistivity decreased as grain size enlarged because the influence of grain boundary scattering was reduced. In case of lower ADT, flexure resistance of annealed ITO was comparatively good because small grains contacted each other at many points and could endure the stress. In case of higher ADT, flexure resistance of that deteriorated as ADT rose because large grains contacted each other at few points and could not suffer the stress and consequently split along the grain boundary.