Fully Self-Aligned Oxide-Semiconductor Field-Effect Transistors

Abstract

Fully self-aligned oxide-semiconductor field-effect transistors have been investigated. In this transistor process, layout patterns of the gate, source and drain electrodes are determined by the first patterning of gate electrode. From a viewpoint of this concept, 8X8 active-matrix back-plane was fabricated. Transparent electrodes of source and drain are also tested by assuming a liquid crystal display, organic electroluminescence display and electronic paper. Obtained field-effect mobility of the transistor was 5 cm²/Vs. This device concept is effective for a flexible display, where, its substrate will be deformed during thermal process.