Abstract
Double patterning technique with 193nm immersion lithography is recognized as a potential candidate for 32nm hp node, and possibly for sub-32nm hp node with recent. In this technique Litho-Process-Litho-Etch (LPLE) because of its simplicity is regarded as an attractive process. However, a workable application of this process has not yet been demonstrated.
Posi/Posi process that doesn't require freezing material has been investigated from the view-point of process simplification, and has been shown to be successful in printing images below 32nm hp. Furthermore contact hole imaging by employing cross-line method has also been proven to be quite successful.
Here we present the results of our work on freezing free Posi/Posi process as applied to cross-lined contact hole, and results of the evaluation of high resolutions obtained from pitch splitting.
