Design and Development of ArF Photoresist for Implant Layers

抄録

Our recent progress on the development of ArF photoresist (PR) for implant layers is reported. Since scum-free patterning is the critical property of an implant PR, a specific focus has been on eliminating scum while maintaining other lithographic performances. Through the optimization of formulation with respect to k value and the use of novel monomers with less bulky substituents, a poly-methacrylate implant PR with minimal scum was obtained. Finally, ion-stopping ability of the prepared PR was tested via secondary ion mass spectrometry (SIMS) and was found to be sufficient for implant layer applications.