Development of Spin-on High Carbon Hard Masks for High Resolution Photolithography

抄録

Silicon and carbon rich hard masks such as SiON and amorphous carbon (ACL) are widely used for high resolution pattern generation in integrated circuit (IC) chip fabrications. Those hard masks are conventionally prepared through chemical vapor deposition (CVD) processes. CVD processes require extra capital investments and have low manufacturing throughput. Spin-on hard masks are prepared using coatable organic polymer-based formulations on regular wafer processing tracks. The process is less complex and has lower manufacturing cost. There are many challenges facing the development of formulations for spin-on carbon (SOC) hard masks for advanced IC applications. In this publication, chemical and physical properties and the lithographic performances of several SOC formulations will be reported.