Abstract
Challenges of lithography performance, dry etch resistance, and substrate dependency in resist materials dedicated to negative tone development (NTD) process were studied. The γ-parameter in contrast curve was increased to achieve improvement in lithography performances, and CD-uniformity (CDU), DOF, and circularity of dense C/H pattern were studied for the resist material. Ohnishi-parameter of de-protected polymer was decreased to improve dry etch resistance, and dissolution property and lithography performance were studied to look at maturity of materials. Formulation dependency on pattern collapse property on spin-on-type Si-hard mask (Si-HM) were studied, and material property to suppress pattern collapse was discussed.
