Journal of Photopolymer Science and Technology
Online ISSN : 1349-6336
Print ISSN : 0914-9244
ISSN-L : 0914-9244
Flexible Transistors with Low Temperature Curable Polyimide Gate Insulator
Hirokuni OhuchiYutaro TakayanagiHiroaki YanoZongfau DuanTakanori OkukawaYuichiro YanagiAkira YoshidaYasushiro Nishioka
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2012 Volume 25 Issue 3 Pages 381-383

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Abstract
Flexible, high-performance, and low-cost organic-thin-film-transistors (OTFTs) can be fabricated utilizing polyethylene terephthalate (PET) as a substrate material and low-temperature curable polyimide (PI) as a gate insulator. In this paper, top-contact OTFTs with a PET/Au/polyimide/pentacene/Au structure were fabricated and evaluated. Here, a low temperature (200 °C)-curable PI was employed. The influences of pentacene purity on the OTFT performance were also investigated. As a result, flexible OTFTs were successfully fabricated, and the mobility of the OTFT with the 99.9%-purity pentacene was 0.011 cm2/Vs, while the mobility of the OTFT with the 99.995%-purity pentacene increased up to 0.1 cm2/Vs.
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© 2012 The Society of Photopolymer Science and Technology (SPST)
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