Pattern Size Trimming by UV Exposure for Resist Patterns Fabricated by Thermal Nanoimprint Lithography

Abstract

The shrinkage of polymethylmethacrylate and polystyrene patterns fabricated by the thermal nanoimprint process by the conventional UV/O3 treatment is examined. The reduction rate at the pattern top is larger than those at the side wall and bottom. This shows that the pattern height decreases rapidly. The line width control by the UV/O₃ treatment should be carried out carefully. The stretched layer is often observed at the cutting surface of the resist pattern. The formation of the stretched layer can be effectively suppressed by the short UV/O₃ treatment.