EUV Resist Materials Design for 15 nm Half Pitch and Below

Abstract

Chemically amplified resist materials with a different sensitivity were prepared to investigate impact of sensitivity on resolution at 15 nm half-pitch (hp) using a EUV micro-field exposure tool (MET) at SEMATECH Berkeley. Sensitivity at least slower than 30 mJ/cm² was required to resolve 15 nm hp patterns using current EUV resists. It is noteworthy that resolution of 15 nm hp was limited by not only pattern collapse but also pinching of patterns. The same tendency is observed in E-beam patterning at 20 nm hp. A strong relationship between pinching and sensitivity in E-beam exposure indicates contribution of photon-shot noise on the pinching. Clear correlation between diffusion length and pinching using the E-beam exposure indicates that acid diffusion is another contributor on the pinching. Bound PAG into polymer and molecular PAG with a big anchor group showed almost same character on pinching. Key conclusion here is even in a molecular PAG, we can control acid diffusion to achieve 15 nm hp resolution capability. Strategy to improve sensitivity is to utilize resist with high deprotection efficiency. Polymer with a low thermal activation energy on deprotection (low Ea polymer) was demonstrated as a key technology to achieve 15 nm hp resolution with a faster sensitivity below 26 mJ/cm². Special rinse material was effective for reducing LWR by - 20%. Sensitivity dependency of outgassing have been systematically discussed at first. A good linear correlation between a cleanable outgassing amount and exposure energy strongly indicates tradeoff relationship between outgassing and sensitivity. Applying a new EUV topcoat to resist demonstrated reduction of outgassing from 7.39 nm to below 0.1 nm with maintaining resolution.