Block Copolymers for DSA in the 100 Å Regime

C. Grant Willson; Gregory Blachut; Michael J. Maher; William J. Durand; Christopher M. Bates; Matthew C. Carlson; Jeffrey L. Self; Austin P. Lane; Yusuke Asano; Stephen Sirard; Colin O. Hayes; Christopher J. Ellison

doi:10.2494/photopolymer.27.415

C. Grant Willson, Gregory Blachut, Michael J. Maher, William J. Durand, Christopher M. Bates, Matthew C. Carlson, Jeffrey L. Self, Austin P. Lane, Yusuke Asano, Stephen Sirard, Colin O. Hayes, Christopher J. Ellison

Author information

C. Grant Willson
Department of Chemistry, The University of Texas at Austin
McKetta Department of Chemical Engineering, The University of Texas at Austin
Gregory Blachut
McKetta Department of Chemical Engineering, The University of Texas at Austin
Michael J. Maher
Department of Chemistry, The University of Texas at Austin
William J. Durand
McKetta Department of Chemical Engineering, The University of Texas at Austin
Christopher M. Bates
Department of Chemistry, The University of Texas at Austin
Matthew C. Carlson
McKetta Department of Chemical Engineering, The University of Texas at Austin
Jeffrey L. Self
McKetta Department of Chemical Engineering, The University of Texas at Austin
Austin P. Lane
McKetta Department of Chemical Engineering, The University of Texas at Austin
Yusuke Asano
Department of Chemistry, The University of Texas at Austin
Stephen Sirard
Lam Research Corp.
Colin O. Hayes
Department of Chemistry, The University of Texas at Austin
Christopher J. Ellison
McKetta Department of Chemical Engineering, The University of Texas at Austin

Keywords: Block copolymers, DSA, Lithography, Etching

JOURNAL FREE ACCESS

2014 Volume 27 Issue 4 Pages 415-418

DOI https://doi.org/10.2494/photopolymer.27.415

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Abstract

Block copolymers with lines and spaces in the 100 Å regime have been oriented using a perfectly neutral top coat and bottom coat and these structures have been successfully developed with RIE to provide high aspect ratio topographic features. Under these conditions, the materials can be annealed in less than 60 seconds. Future work will be directed toward continued increases in χ and development of simple and efficient processes for orienting these structures.

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