Synthesis and Resist Properties of Hyperbranched Polyacetals

抄録

The synthesized noria-AD offered 40 nm resolution resist pattern with LWR = 9.5 nm in the case of EB exposure tool and a clear 26 nm resolution pattern with LWR = 8.3 nm by means of EUV exposure tool. These results indicate that the present poly(THPE-co-BVOC) would have higher potential to offer higher resolution pattern using EUV lithography system.