Abstract
The effect of the post exposure bake (PEB) on the high resolution of dry film resist for semiconductor packaging was investigated using Hitachi Chemical’s dry film resist. The effective PEB was found to be the baking within 30 min after exposure at a temperature of 40-60 °C for 1-5 min. The longer holding time after PEB lowered the conversion of the upper layer of the resist. The oxygen passed through PET film was thought to deactivate the polymerization terminal radical during the holding time. The margin for the process was expanded by using PVA layer of low oxygen transmission rate. It was also found that the polymerization terminal radical reacted with the unreacted monomer during PEB process.
