Abstract
Limitations on current performances of the chemically amplified resists (CAR), as well as the productivity driven low exposure dose requirements (below 20 mJ/cm2), have brought the researchers to look at a novel class of materials as possible alternative to the CA resists to simultaneously achieve resolution, line-width roughness (LWR) and sensitivity. In 2014, imec has started a new project to look into novel materials for EUV lithography with particular attention to metal containing materials (MCR) to explore alternative approaches that can offer superior characteristics in photoresist imaging: improved LWR and line collapse, high sensitivity and high etch resistance. In this paper we report the first assessment on the enablers of the MCRs from a manufacturing compatibility prospective, as metal cross-contamination and outgassing, to a device integration prospective through the patterning on the ASML NXE:3300 full field scanner exposure tool, the etch performances and new litho-etch integration scheme for 1x nm technology and below. The results obtained are highly promising and give a clear indication that other chemical paths in novel resist formulations are possible in advanced EUV lithography.
