Abstract
Extreme ultraviolet (EUV) lithography with reflective photomasks continues to be a potential patterning technology for high volume manufacturing at the seven nm technology node and beyond. The advantages of EUV lithography are its superior pattern fidelity, wider process windows, and potential for extendibility to future nodes. The disadvantages of EUV lithography are its higher costs and complexity (than ArFi lithography) and the relative immaturity of its supporting infrastructure.
