Abstract
The requirements for next generation resist materials in extreme ultraviolet (EUV) lithography are very challenging. Therefore, the development of new resist materials has been expected to meet strict requirements. Molecular resists are promising resists owing to the small size of their building blocks. In this study, we examined lithographic performances, such as sensitivity and patterning, using noria derivative (noria-CHVEs, Resists 1-3) under EUV and a 75 keV electron beam (EB) exposure system. In particular, the effect of the protection ratio on the lithographic performances was studied by changing the protection ratio. The sensitivities of noria-CHVEs showed high values in the range between 1.8 and 3.0 mJ/cm2. Resist 2 could provide a resist pattern with a higher resolution than Resists 1 and Resist 3, i.e., a semi-isolated pattern with a line width of 30 nm (pitch: 100 nm). These results indicate that the synthesized noria-CHVEs are promising EUV resist materials.
