Abstract
Nanogap electrodes are expected to aid in the study of the electrical properties of single molecules and nanoparticles, and have also been applied to non-volatile memory. However, an electrode that exhibits a large area and good reproducibility is yet to be found. We investigate the nanogap fabrication method combining UV nanoimprint lithography and electromigration. A three-layer lift-off process, using spin-on-glass as an intermediate layer with high etching selectivity, is evaluated. Nanowire array patterns are fabricated in a 9-mm square in the process, which demonstrate the nanogap characteristics of resistance switching effects.
