Interfacial Engineering of Perovskite Quantum-Dot Light-Emitting Devices Using Alkyl Ammonium Salt Layer

Abstract

Herein, we demonstrated that alkyl ammonium salts containing the Br anion, oleylamine bromide (OAM-Br), was used as an interfacial engineering layer between the hole transport layer (HTL) and the perovskite QDs to passivate cation- and anion-defects in perovskite QDs. The OAM-Br interfacial layer enables a high PLQY due to the suppression of surface defects in perovskite QDs. Thus, the CsPbBr₃ QD-LEDs with an OAM-Br layer exhibited a maximum power efficiency of 3.35 lm/W and an external quantum efficiency (EQE) of 2.08% that which are higher efficiencies than those of the LEDs without an OAM-Br layer.