Interfacial Engineering of Perovskite Quantum-Dot Light-Emitting Devices Using Alkyl Ammonium Salt Layer

Hinako Ebe; Yoshihito Takahashi; Jun Sato; Takayuki Chiba; Satoru Ohisa; Junji Kido

doi:10.2494/photopolymer.31.329

Hinako Ebe, Yoshihito Takahashi, Jun Sato, Takayuki Chiba, Satoru Ohisa, Junji Kido

著者情報

キーワード: Perovskites, Quantum dot, Light-emitting device, Interfacial engineering, Alkyl ammonium layer

ジャーナルフリー

2018 年 31 巻 3 号 p. 329-333

DOI https://doi.org/10.2494/photopolymer.31.329

詳細

抄録

Herein, we demonstrated that alkyl ammonium salts containing the Br anion, oleylamine bromide (OAM-Br), was used as an interfacial engineering layer between the hole transport layer (HTL) and the perovskite QDs to passivate cation- and anion-defects in perovskite QDs. The OAM-Br interfacial layer enables a high PLQY due to the suppression of surface defects in perovskite QDs. Thus, the CsPbBr₃ QD-LEDs with an OAM-Br layer exhibited a maximum power efficiency of 3.35 lm/W and an external quantum efficiency (EQE) of 2.08% that which are higher efficiencies than those of the LEDs without an OAM-Br layer.

責任著者(Corresponding author)

J-STAGEへの登録はこちら（無料）