Abstract
A conductive film and the micropattern were prepared by laser-induced reduction of graphene oxide (GO). A 532 nm laser beam was scanned on a film made from a GO disper-sion solution using a galvano-scanner system. The influences of the laser irradiation condi-tions such as laser power, scan speed, and atmosphere on the chemical structure changes of a reduced graphene oxide (rGO) were studied by micro-Raman spectroscopy. The Raman scattering intensities of D, G, and 2D bands were remarkably influenced by the laser irradiation conditions. The formation of a few-layer graphene plane structure was suggested by a low ratio of intensities of D/G bands (ID/IG) and the shape of 2D band in the Raman spectra. The surface resistivity was decreased with increasing in the laser power corresponding to the decrease of the ID/IG ratio in the laser-induced reduction under an inert gas (Ar) atmosphere. Conductive rGO micro-grid structures were fabricated by laser direct writing using a GO film in Ar.
