Au "Edged Hole Array" for Sensor Application

抄録

This paper described the design and fabrication of precursor for Au hole structure with four edges (edged hole array: EHA) for sensor application. In this paper, effect of the gap length of opposite edges g and hole side length l was investigated systematically by simulation. As the result, optimal design of EHA that shows strong light absorption (> 90%) and electric field (1.79×10⁵-fold increase against the incident light) at λ = 785 nm was revealed. Finally, the precursor resist pattern for EHA was fabricated using electron beam lithography and cold development. As the result, the precursor structure that was expected to generate strong electric field at λ = 785 nm was successfully fabricated.