Characterization and Control of Hole Missing Defect in EUV Patterning

Abstract

Towards realistic adoption of EUV technology, material/process induced defect must be considerable problem. Several excellent studies have been introduced before and it mainly focused on the relation between defect number and pattern size and pattern pitch. Unfortunately, the study related defect transfer behavior have not been quite few, despite defect inspection is executed through top-down SEM.

 In this study, latent defect on via hole pattern, especially, the behavior of invisible hole around bottom area was focused on and we tied to clarify the exist of hidden missing defect utilizing unique RIE technique in hole image transfer onto under layer of resist film.