2019 Volume 32 Issue 4 Pages 603-607
Resist removal phenomena using laser irradiation were compared in the novolak resist and the PVP. Thresholds for stripping from the Si wafer and damaged at the Si wafer were evaluated for the laser irradiating condition in the normal atmosphere and in the water. The PVP was found to be easy to be stripped as compared with the novolak resist. Only in the water, the photoresist material was completely stripped from the Si wafer surface. The size of the changed area by the laser irradiation for the PVP was approximately 2 times larger than that of the novolak resist. Time-resolved images were also acquired in 400 ns and 7500 ns after the laser irradiation. The scattering condition of the PVP in the removal process was completely different from that of the novolak resist.
