2020 Volume 33 Issue 1 Pages 37-44
Gigaphoton Inc. has been developing a CO2-Sn-LPP (LPP: Laser Produced Plasma) extreme ultraviolet (EUV) light source system for high-volume manufacturing (HVM) semiconductor lithography. Key components of the source include a high-power CO2 laser with 15 ns pulse duration and 100 kHz repetition frequency, a solid-state pre-pulse laser with 10 ps pulse duration, a high speed Sn-droplet generator, a high-speed and high accuracy shooting system, and a magnetic field debris mitigation system. To achieve an in-band power of 330 W with long collector mirror lifetime and stable output, we improved the performance of key system components. We achieved an in-band power of 250 W under DC operation and demonstrated a power scalability up to 330 W. This paper presents the key technology update of our EUV light source.