Journal of Photopolymer Science and Technology
Online ISSN : 1349-6336
Print ISSN : 0914-9244
ISSN-L : 0914-9244
Non-chemically Amplified Negative Molecular Resist Materials using Polarity Change by EUV Exposure
Kohei FujisawaHiroyuki MaekawaHiroto KudoKazumasa OkamotoTakahiro Kozawa
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2021 Volume 34 Issue 1 Pages 87-93


We examined the synthesis, physical properties, and resist property of the molecular non-chemically amplified resist materials. By the condensation reaction of tri(4-hydroxyphenyl)methane (HPM) and various bisphenols (BisA, BisAF, HPE, and TDP) with 4-bromoethoxyphenyl methyl sulfide (BEPMS), the compounds (HPM-BEPMS, BisA-BEPMS, BisAF-BEPMS, HPE-BEPMS, and TDP-BEPMS) containing sulfide moieties were synthesized. These were reacted with silver trifluoromethanesulfonate and iodomethane, yielding corresponding compounds HPM-BEPMSion, BisA-BEPMSion, BisAF-BEPMSion, HPE-BEPMSion, and TDP-BEPMSion, respectively. They have good physical properties (solubility, film-forming ability, and thermal stability) and high nega-type resist sensitivity in an extreme ultraviolet (EUV) exposure tool, indicating these were good candidate to offer higher resolution resist pattern.

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© 2021 The Society of Photopolymer Science and Technology (SPST)
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