Improvement of Resist Characteristics by Synthesis of a Novel Dissolution Inhibitor for Chemically Amplified Three-Component Novolac Resist

Abstract

A photosensitive polymer called photoresist is used to create fine circuit patterns on the surface of semiconductors. The aim of this study was to improve the resist function by incorporating a chemical amplification mechanism into the base polymer, novolac resin. The resist is composed of three components: base polymer, dissolution inhibitor (DI), and photoacid generator. The ability to inhibit the dissolution of resist polymer in the unexposed area was improved by increasing the molecular size of DI. The high acidity of deprotected DI with carboxyl groups improved the ability to promote dissolution of resist polymer in the exposed area. The resists containing DIs with large molecular size and high acidity showed improved resolution.