2022 Volume 35 Issue 1 Pages 61-65
In extreme ultraviolet lithography (EUVL), it is required to develop EUV resist which has low line width roughness (LWR) for the further miniaturization of circuit pattern. In order to reduce LWR, it is necessary to analyze and control the chemical-components spatial distribution in the resist thin film. We have reported that the measurement of chemical-components spatial distribution in the resist thin film coated on the Si3N4 membrane using the method of the transmission-mode resonant soft X-ray scattering (RSoXS). In this study, in order to analyze the chemical-structure-size distribution in the resist thin film on a Si wafer under similar condition adapted to the resist-coating actual process, we examined the grazing-incidence RSoXS (GI-RSoXS). A chemically amplified resist (CAR) and a non-CAR were spin-coated on silicon wafers, which had varied film thickness of 20, 50, and 100 nm. The scattering profile of each sample was measured at the incident photon energy of 280 and 296 eV. As a result, it is suggested that the chemical-structure-size distribution in the resist thin films depends on the resist film thickness. It is confirmed that the GI-RSoXS method is very effective to evaluate the chemical-structure-size distribution of resist thin films.
