Advanced Development Techniques for Extreme-Tight Pitch Patterning

Hikari Tomori; Cong Que Dinh; Seiji Nagahara; Kanzo Kato; Shinichiro Kawakami; Yuhei Kuwahara; Soichiro Okada; Kayoko Cho; Junji Nakamura; Syuuya Yamasaki; Shoichi Terada; Makoto Muramatsu; Alexandra Krawicz; Kathleen McInerney; Nathan Antonovich; Lior Huli

doi:10.2494/photopolymer.37.245

Hikari Tomori , Cong Que Dinh, Seiji Nagahara, Kanzo Kato, Shinichiro Kawakami, Yuhei Kuwahara, Soichiro Okada, Kayoko Cho, Junji Nakamura, Syuuya Yamasaki, Shoichi Terada, Makoto Muramatsu, Alexandra Krawicz, Kathleen McInerney, Nathan Antonovich, Lior Huli

著者情報

キーワード: MOR, Development, EUV lithography, E-beam lithography, Tight pitch

ジャーナルフリー

2024 年 37 巻 3 号 p. 245-250

DOI https://doi.org/10.2494/photopolymer.37.245

詳細

抄録

In this study, we evaluated the impact of a new development method ESPERT™ on tight pitch contact holes patterns fabricated by extreme ultraviolet (EUV) and e-beam (EB) lithography. For EUV lithography, ESPERT™ demonstrated significant improvements in sensitivity along with reductions in roughness and defects. For EB lithography, the technology improved sensitivity while maintaining roughness levels. In addition, we attempted to provide a qualitative explanation of the characteristic behavior observed in LCDU by introducing a new parameter. This research demonstrates the practicality of ESPERT™ in tight pitch patterning, suggesting that ESPERT™ could play a crucial role in enhancing patterning quality.

責任著者(Corresponding author)

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