Abstract
CH4 plasma CVD films were formed by a reactor with a parallel plate electrode system at a discharge frequency of 13.56MHz with using a mixture gas of CH4/H2 and H4/Ar. The deposition rates were measured as a parameter of gas pressure, and discharge power in order to discuss deposition mechanisms. The effects of O2 and SF6 addition in the mixture gases were also examined. Addition of oxygen gas in the mixture gas of CH4/H2 enhanced the growth rates, which were proportional to the radiation intensity ratio CH/Hα in the plasma. On the other hand, the addition of oxygen gas in the mixture gas of CH4/Ar decreased the growth rate. It was observed that oxygen atoms were extracted from the film during the process, however sulfur atoms were doped into the film. These experiments suggested the possibility of film property control.
