抄録
The correlation between the light intensity fluctuation and the grain size distribution of excimer laser crystallization (ELC) is investigated using the negative type resist. The sensitivity is dependent on the concentration of the chromophore 3, 3′-diazidodiphenyl sulfone and molecular weight of the resin poly(p-vinylphenol). The γ -characteristics is linear in the fluence region less than 4OmJ/cm2 on 1 shot irradiation. The vertical resolution,
or dynamic range, is 50:1 less than one fourth of CCD camera. The lateral resolution of resist is dependent on the resolution of measurement equipments, and can be guaranteed up to nanometer order by AFM.
