Resists and Other Critical Issues in 157-nm Lithography

Abstract

This paper outlines the critical issues facing the implementation of 157-nm lithography as a sub-100-nm technology. Special emphasis is placed on 157-nm photoresist options, including ultrathin resists and thicker resists with new chemistries. The status of other issues is also presented, such as mask materials, pellicles, optical materials, and coatings.