Development of Resist Materials for EUVL

Shigeo Irie; Shigeru Shirayone; Shigeyasu Mori; Hiroaki Oizumi; Nobuyuki Matsuzawa; Ei Yano; Shinji Okazaki; Takeo Watanabe; Hiroo Kinoshita

doi:10.2494/photopolymer.13.385

Shigeo Irie, Shigeru Shirayone, Shigeyasu Mori, Hiroaki Oizumi, Nobuyuki Matsuzawa, Ei Yano, Shinji Okazaki, Takeo Watanabe, Hiroo Kinoshita

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Keywords: Extreme ultra-violet lithography, Single layer resist, Chemically amplified resist

JOURNAL FREE ACCESS

2000 Volume 13 Issue 3 Pages 385-389

DOI https://doi.org/10.2494/photopolymer.13.385

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Abstract

The single layer chemically amplified resists are investigated for the extreme ultra-violet lithography. From the results of the sensitivity curve, the positive-tone resist based on poly (p-hydroxystyrene)-type polymers (PHS) have high sensitivities and high gamma values to the EUV exposure wavelength. Furthermore, by the optimization of both the dosage and the wafer focusing position, we succeed in replicating 0.056-μm-resist-pattern width.

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