Journal of Photopolymer Science and Technology
Online ISSN : 1349-6336
Print ISSN : 0914-9244
ISSN-L : 0914-9244
Advanced Materials for 193-nm Resists
Naomi ShidaTohru UshirogouchiKoji AsakawaTakeshi OkinoSatoshi SaitoYoshinori FunakiAkira TakaragiKiyoharu TsutsumiKeizo InoueTatsuya Nakano
Author information
JOURNAL FREE ACCESS

2000 Volume 13 Issue 4 Pages 601-606

Details
Abstract
Acrylate monomers were synthesized using a novel aerobic oxidation reaction employing N-hydroxyphtalimide (NHPI) as a catalyst, and then polymerized. These reactions were confirmed to be applicable for the mass production of those compounds. We have synthesized series of reported 193-nm resist materials, and found that they are subject to certain problems. That is, acrylates having hydrophilic acid leaving groups, such as pyranyl or acid-leaving lactones usually have poor etching resistance. Moreover, t-butyl acid-leaving groups or acid-leaving alicyclic groups are too hydrophobic to achieve high performance of the resist. From this point of view, we have designed and synthesized advanced monomers having hybrid structure of alicyclic ring and polar moiety, using aerobic oxidation reaction Finally, patterns with a resolution of 0.13-micron, based on the 1G bit DRAM design rule, were successfully fabricated by optimizing the resist composition containing newly synthesized monomers.
Content from these authors
© The Technical Association of Photopolymers, Japan
Previous article Next article
feedback
Top