Journal of Photopolymer Science and Technology
Online ISSN : 1349-6336
Print ISSN : 0914-9244
ISSN-L : 0914-9244
Rejuvenation of 248nm Resist Backbones for 157nm Lithography
Young C. BaeKatsuji DoukiTianyue YuJunyan DaiDirk SchmaljohannSeok Ho KangKeon Hyeong KimHilmar KoernerWill ConleyDaniel MillerRaghu BalasubramanianSusan HollChristopher K. Ober
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2001 Volume 14 Issue 4 Pages 613-620

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Abstract

Fluorocarbinol-based acrylic and styrenic monomers, such as 2-[4-(2-hydroxyhexafluoro isopropyl)cyclohexane]hexafluoroisopropyl acrylate (1) 2-[4-(2, 2, 2-trifluoro-1-methoxy-methoxy-1-trifluoromethylethyl)cyclohexane]hexafluoroisopropyl acrylate (2), and 2-[4-(2, 2, 2-trifluoro-1-ethoxymethoxy-1-trifluoromethylethyl)]styrene (3), were synthesized and their (co)polymers were studied as photoresist platforms for 157nm lithography. It was found that these (co)polymers are unusually transparent at 157nm, and absorbances of poly(1) and poly(1-co-3) were determined to be 1.93 and 2.38μm-1, respectively. It was also found that further improvement in transparency is possible by adding transparency enhancers to the resist platform. Lithographic studies were carried out with poly(1)- and poly(3)-based resists using 157 and 248nm steppers, and it was proven that, after selective modification, it is possible to use conventional resist backbones, such as acrylic or styrenic, in the design of single-layer resists for 157nm lithography.

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© The Technical Association of Photopolymers, Japan
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