Abstract
A new aqueous developable positive tone photodefinable polyimide was prepared from poly(hydroxy amic acid) and naphthoquinonediazide for semiconductor stress buffer coat, which exhibits excellent photolithographic properties in high resolution, wide focus latitude and good stability for process holding time, with equivalent film properties to conventional non-photodefinable polyimide. Through dry etching evaluation of the SiN passivation layer, it was confirmed that the cured polyimide pattern works as an etching mask.
