Estimation of Young's Modulus of Resist Pattern by using Atomic Force Microscope
2001 年 14 巻 5 号 p. 731-734
詳細
2001 年 14 巻 5 号 p. 731-734
By applying a certain load directly with a micro cantilever tip, a elastic deformation of resist micro pattern adhering on a substrate can be characterized quantitatively. By combining with finite element analysis of resist pattern deformation, Young's modulus of micro resist pattern of 190nm width and 770nm height formed by KrF excimer laser lithography can be obtained. Young's modulus of resist pattern is estimated in the range of 4 to 5 GPa, which is similar to those of typical polymer materials.
