Abstract
EPL (Electron Beam Projection Lithography) is expected especially for the application to contact hole and gate layers in the design rule below 65nm technology node. The reason is its excellent resolution and a good linewidth uniformity by adoption of high acceleration voltage of 100kV and a very small semi-angle of the electron beam. Nikon is developing an EPL exposure tool named as EB Stepper. The development status of an electron optical column and a vacuum compatible stage is introduced. The status of infrastructure is also introduced briefly. Current resist performance is overviewed. Generation process of secondary electron is reviewed and it implies shot noise issue is much moderated.
