Methacrylonitrile Based Si-Containing Polymers for 157-nm Positive Resist

Toyofumi Shinozuka; Tomoaki Kawakami; Haruyuki Okamura; Masahiro Tsunooka; Masamitsu Shirai

doi:10.2494/photopolymer.15.629

Toyofumi Shinozuka, Tomoaki Kawakami, Haruyuki Okamura, Masahiro Tsunooka, Masamitsu Shirai

著者情報

キーワード: 157nm lithography, Si-containing polymer, silylation, methacrylonitrile, oxygen plasma, positive resist

ジャーナルフリー

2002 年 15 巻 4 号 p. 629-636

DOI https://doi.org/10.2494/photopolymer.15.629

詳細

抄録

Polymers based on silylated p-hydroxy-α-methylstyrene (SiMST) or methacrylic acid (SiMA) were prepared and their application to positive resists for 157nm lithography was studied. These polymers were synthesized by silylation of the copolymer of methacrylonitrile (MAN) and p-hydroxy-α-methylstyrene (HMST) or copolymerization of corresponding monomers. Etch rate of the films using O₂ plasma was 12-45nm/min which was lower than that for poly(vinylphenol) film (80nm/min). The incorporation of Si atoms in the polymer side chain strongly enhanced the etch resistance. Changes in a mass of the films during irradiation were studied by in-situ QCM method. Weight loss for SiMA units was larger than that for SiMST units. Dissolution properties of the films in 2.38wt% TMAH aqueous solution were studied and resist pattern profile was simulated.

責任著者(Corresponding author)

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