DESIRE PROCESS: Development and Application of Novel PLASMASK® Resist for Excimer Laser Lithography.

Kazunori Kato; Masatoshi Kusama; Masahiro Takagi; Kazuo Taira; Toshihiko Takahashi; Kenji Yanagihara

doi:10.2494/photopolymer.5.149

Kazunori Kato, Masatoshi Kusama, Masahiro Takagi, Kazuo Taira, Toshihiko Takahashi, Kenji Yanagihara

著者情報

ジャーナルフリー

1992 年 5 巻 1 号 p. 149-156

DOI https://doi.org/10.2494/photopolymer.5.149

詳細

抄録

We have reported that process condition such as presilylation time and silylation temperature could control a pattern profile.^1-3 In this paper, we describe that resist material such as base resin could also influence a pattern profile. Additionally, it is shown that a resist material could be modified for application to excimer laser lithography.

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