Journal of Photopolymer Science and Technology
Online ISSN : 1349-6336
Print ISSN : 0914-9244
ISSN-L : 0914-9244
PROGRESS IN ACETAL BASED DEEP UV RESIST
Munirathna PadmanabanYoshiaki KinoshitaTakanori KudoThomas LynchSeiya MasudaYuko NozakiHiroshi OkazakiGeorg PawlowskiKlaus J. PrzybillaHorst RoeschertWalter SpiessNatsumi Suehiro
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1994 Volume 7 Issue 3 Pages 461-472

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Abstract
Acetal based deep UV resists, AZ® DX series, are high performance, positive tone deep UV resists consisting of poly(3-methyl, 4- hydroxystyrene-co-4-hydroxystyrene) matrix resin, poly(N, O-acetal) dissolution inhibitor, bis(arylsulfonyl) diazomethane photoacid generator and a photobase to stabilize the latent acid image. The resist can lineate structures between 0.35 and 0.25μm using KrF laser (248nm) source. In the present paper, the background for the selection of current components and the function of the photobase is presented. Finally, the lithographic properties of the acetal based resist, AZ® DX 46 is presented, demonstrating the usefulness of the resist for 64 and 256Mbit DRAM manufacturing.
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© The Technical Association of Photopolymers, Japan
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