SINGLE LAYER RESISTS WITH ENHANCED ETCH RESISTANCE FOR 193nm LITHOGRAPHY
1994 年 7 巻 3 号 p. 507-516
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1994 年 7 巻 3 号 p. 507-516
The quest for a high performance positive chemically amplified (CA) resist for 193nm lithography is a significant challenge. We have recently developed the first high resolution positive resist for 193nm lithography.[1] Our work now centers on improving etch resistance while maintaining imaging quality. In this paper we will discuss structure/property relationships of methacrylate polymers with increased etch resistance over our first generation resist. Modifications which improve etch resistance often negatively impact aqueous solubility and polymer thermal properties. Several approaches will be discussed whichattempt to address competing considerations in positive resist design.
