TRANSITION-METAL OXIDE RESISTS FOR ELECTRON-BEAM AND FOCUSED-ION-BEAM LITHOGRAPHY

抄録

Amorphous transition-metal oxide films become insoluble in chemical etching solution after electron-beam or Ga⁺ focused-ion-beam exposure. Exposure characteristics were measured showing the advantageous features with high contrast γ values. High sensitivity was observed in the case of Ga⁺ focused-ion-beam exposure. Mechanism of the effect of exposure is examined and two different mechanisms are proposed for electron-beam and Ga⁺ focused-ion-beam exposures. In the former case, desorption of oxygen is a predominant factor for the decrease of solubility and in the latter case structural change to the ordered state is a predominant factor. A useful application i s presented for the fabrication of fine metallic Mo wires with 40nm width by H₂-reduction from MoO₃ fine patterns.