1995 年 8 巻 4 号 p. 525-534
An environmentally stable resist with high contrast, sensitivity and resolution is presented. Delay stability in excess of 24hr. has been achieved with insignificant change in linewidth. The resist also demonstrates extreme insensitivity to PEB, showing insignificant linewidth changes over a PEB temperature variation between 20°C-100°C. The resist is sensitive to DUV, X-ray and e-beam radiation. Linearity down to 0.25μ m using 0.5NA MSII (248nm) tool has been demonstrated. The resist shows better than 0.8μm DOF and 15% DL at 0.25μm line and space pairs. Resolution down to 75nm line and space pairs has been demonstrated with 100KeV e-beam tool. We have discussed a new approach to achieving an environmentally-stable, chemically-amplified resist. The resist system, KRS, combines the advantages of conventional and chemically-amplified resists. The resist exhibits high contrast, sensitivity and resolution and at the same time is environmentally-robust and extremely insensitive to PEB temperature variation. The resist demonstrated linearity down to 0.25μm with acceptable DOF and DL using 0.5NA MSII stepper. The ultimate resolution is 0.225μm, limited only by the smallest feature on the mask at the current time. The resist attributes make it compatible with current 0.25μm DUV lithography requirements and extendible to future needs with an improved DUV tool set. The resist is also sensitive to e-beam and X-ray radiation. High resolution imaging, 75nm line and space pairs in 0.75μm thick resist, has been demonstrated using 100KeV e-beam tool.
